IPD35N10S3L26ATMA1 vs AP50T10GJ-HF feature comparison

IPD35N10S3L26ATMA1 Infineon Technologies AG

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AP50T10GJ-HF Advanced Power Electronics Corp

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Rohs Code Yes Yes
Part Life Cycle Code Not Recommended Contact Manufacturer
Ihs Manufacturer INFINEON TECHNOLOGIES AG ADVANCED POWER ELECTRONICS CORP
Package Description SMALL OUTLINE, R-PSSO-G2 IN-LINE, R-PSIP-T3
Reach Compliance Code not_compliant compliant
ECCN Code EAR99 EAR99
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 175 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V 100 V
Drain Current-Max (ID) 35 A 37 A
Drain-source On Resistance-Max 0.0319 Ω 0.03 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 75 pF
JEDEC-95 Code TO-252 TO-251
JESD-30 Code R-PSSO-G2 R-PSIP-T3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 2 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE IN-LINE
Peak Reflow Temperature (Cel) NOT SPECIFIED NOT SPECIFIED
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 71 W
Pulsed Drain Current-Max (IDM) 140 A 120 A
Reference Standard AEC-Q101; IEC-68-1
Surface Mount YES NO
Terminal Finish Tin (Sn)
Terminal Form GULL WING THROUGH-HOLE
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED NOT SPECIFIED
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Part Package Code TO-251
Pin Count 3
Qualification Status Not Qualified
Transistor Application SWITCHING

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Compare AP50T10GJ-HF with alternatives