IPD30N08S2L21XT
vs
SPD30N08S222NTMA1
feature comparison
Part Life Cycle Code |
Active
|
Active
|
Ihs Manufacturer |
INFINEON TECHNOLOGIES AG
|
INFINEON TECHNOLOGIES AG
|
Package Description |
GREEN, PLASTIC PACKAGE-3/2
|
PLASTIC PACKAGE-3
|
Reach Compliance Code |
compliant
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
Factory Lead Time |
12 Weeks
|
|
Additional Feature |
ULTRA-LOW RESISTANCE
|
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
|
Avalanche Energy Rating (Eas) |
240 mJ
|
240 mJ
|
Case Connection |
DRAIN
|
DRAIN
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
75 V
|
75 V
|
Drain Current-Max (ID) |
30 A
|
30 A
|
Drain-source On Resistance-Max |
0.026 Ω
|
0.026 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code |
TO-252
|
TO-252
|
JESD-30 Code |
R-PSSO-G2
|
R-PSSO-G2
|
Number of Elements |
1
|
1
|
Number of Terminals |
2
|
2
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Pulsed Drain Current-Max (IDM) |
120 A
|
120 A
|
Reference Standard |
AEC-Q101
|
|
Surface Mount |
YES
|
YES
|
Terminal Form |
GULL WING
|
GULL WING
|
Terminal Position |
SINGLE
|
SINGLE
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
1
|
1
|
Transistor Application |
|
SWITCHING
|
|
|
|
Compare IPD30N08S2L21XT with alternatives
Compare SPD30N08S222NTMA1 with alternatives