IPD30N08S2L21ATMA1
vs
IRFR2407TRLPBF
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Transferred
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
INTERNATIONAL RECTIFIER CORP
Package Description
SMALL OUTLINE, R-PSSO-G2
LEAD FREE, PLASTIC, DPAK-3
Reach Compliance Code
not_compliant
not_compliant
ECCN Code
EAR99
EAR99
Factory Lead Time
4 Weeks
Samacsys Manufacturer
Infineon
Additional Feature
ULTRA-LOW RESISTANCE
AVALANCHE RATED, HIGH RELIABILITY
Avalanche Energy Rating (Eas)
240 mJ
130 mJ
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
75 V
75 V
Drain Current-Max (ID)
30 A
30 A
Drain-source On Resistance-Max
0.026 Ω
0.026 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-252
TO-252AA
JESD-30 Code
R-PSSO-G2
R-PSSO-G2
JESD-609 Code
e3
e3
Moisture Sensitivity Level
1
1
Number of Elements
1
1
Number of Terminals
2
2
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
260
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Pulsed Drain Current-Max (IDM)
120 A
170 A
Reference Standard
AEC-Q101
Surface Mount
YES
YES
Terminal Finish
Tin (Sn)
Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Form
GULL WING
GULL WING
Terminal Position
SINGLE
SINGLE
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
2
Pbfree Code
Part Package Code
TO-252AA
Pin Count
3
Operating Temperature-Max
175 °C
Power Dissipation-Max (Abs)
110 W
Qualification Status
Not Qualified
Time@Peak Reflow Temperature-Max (s)
30
Transistor Application
SWITCHING
Compare IPD30N08S2L21ATMA1 with alternatives
Compare IRFR2407TRLPBF with alternatives