IPB80N06S2LH5ATMA1
vs
FDP6035L
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Active
Active
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
ROCHESTER ELECTRONICS LLC
Package Description
GREEN, PLASTIC, TO-263, 3 PIN
TO-220, 3 PIN
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
Samacsys Manufacturer
Infineon
Additional Feature
LOGIC LEVEL COMPATIBLE
LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas)
700 mJ
150 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
55 V
30 V
Drain Current-Max (ID)
80 A
58 A
Drain-source On Resistance-Max
0.0062 Ω
0.011 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-263AB
TO-220AB
JESD-30 Code
R-PSSO-G2
R-PSFM-T3
Number of Elements
1
1
Number of Terminals
2
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Pulsed Drain Current-Max (IDM)
320 A
175 A
Surface Mount
YES
NO
Terminal Form
GULL WING
THROUGH-HOLE
Terminal Position
SINGLE
SINGLE
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
2
Pbfree Code
Rohs Code
Part Package Code
TO-220AB
Pin Count
3
JESD-609 Code
e3
Moisture Sensitivity Level
NOT SPECIFIED
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Qualification Status
COMMERCIAL
Terminal Finish
TIN
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Application
SWITCHING
Compare IPB80N06S2LH5ATMA1 with alternatives
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