IPB80N06S209ATMA2
vs
IPB80N06S209XT
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Active
Active
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
INFINEON TECHNOLOGIES AG
Package Description
SMALL OUTLINE, R-PSSO-G2
GREEN, PLASTIC, TO-263, 3 PIN
Reach Compliance Code
not_compliant
compliant
ECCN Code
EAR99
EAR99
Factory Lead Time
12 Weeks
Samacsys Manufacturer
Infineon
Avalanche Energy Rating (Eas)
370 mJ
370 mJ
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
55 V
55 V
Drain Current-Max (ID)
80 A
80 A
Drain-source On Resistance-Max
0.0088 Ω
0.0088 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-263AB
TO-263AB
JESD-30 Code
R-PSSO-G2
R-PSSO-G2
JESD-609 Code
e3
Moisture Sensitivity Level
1
Number of Elements
1
1
Number of Terminals
2
2
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Pulsed Drain Current-Max (IDM)
320 A
320 A
Surface Mount
YES
YES
Terminal Finish
Tin (Sn)
Terminal Form
GULL WING
GULL WING
Terminal Position
SINGLE
SINGLE
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
1
Compare IPB80N06S209ATMA2 with alternatives
Compare IPB80N06S209XT with alternatives