IPB80N06S209ATMA1
vs
IPP80N06S2L-06
feature comparison
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
INFINEON TECHNOLOGIES AG
|
ROCHESTER ELECTRONICS LLC
|
| Package Description |
GREEN, PLASTIC, TO-263, 3 PIN
|
GREEN, PLASTIC, TO-220, 3 PIN
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
|
| Samacsys Manufacturer |
Infineon
|
|
| Avalanche Energy Rating (Eas) |
370 mJ
|
530 mJ
|
| Case Connection |
DRAIN
|
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
55 V
|
55 V
|
| Drain Current-Max (ID) |
80 A
|
80 A
|
| Drain-source On Resistance-Max |
0.0088 Ω
|
0.0081 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JEDEC-95 Code |
TO-263AB
|
TO-220AB
|
| JESD-30 Code |
R-PSSO-G2
|
R-PSFM-T3
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
3
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
FLANGE MOUNT
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Pulsed Drain Current-Max (IDM) |
320 A
|
320 A
|
| Surface Mount |
YES
|
NO
|
| Terminal Form |
GULL WING
|
THROUGH-HOLE
|
| Terminal Position |
SINGLE
|
SINGLE
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
1
|
2
|
| Pbfree Code |
|
Yes
|
| Rohs Code |
|
Yes
|
| Part Package Code |
|
TO-220AB
|
| Pin Count |
|
3
|
| Additional Feature |
|
LOGIC LEVEL COMPATIBLE
|
| JESD-609 Code |
|
e3
|
| Moisture Sensitivity Level |
|
1
|
| Peak Reflow Temperature (Cel) |
|
260
|
| Qualification Status |
|
COMMERCIAL
|
| Terminal Finish |
|
MATTE TIN
|
| Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
|
|
|
Compare IPB80N06S209ATMA1 with alternatives