IPB65R110CFD7
vs
IPB65R110CFD
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Active
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
INFINEON TECHNOLOGIES AG
Package Description
TO-263, D2PAK-3/2
SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code
not_compliant
compliant
ECCN Code
EAR99
EAR99
Additional Feature
HIGH RELIABILITY
Avalanche Energy Rating (Eas)
97 mJ
845 mJ
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
650 V
650 V
Drain Current-Max (ID)
22 A
31.2 A
Drain-source On Resistance-Max
0.11 Ω
0.11 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-263AB
TO-263AB
JESD-30 Code
R-PSSO-G2
R-PSSO-G2
JESD-609 Code
e3
e3
Moisture Sensitivity Level
1
1
Number of Elements
1
1
Number of Terminals
2
2
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-55 °C
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
114 W
Pulsed Drain Current-Max (IDM)
82 A
99.6 A
Surface Mount
YES
YES
Terminal Finish
TIN
Tin (Sn)
Terminal Form
GULL WING
GULL WING
Terminal Position
SINGLE
SINGLE
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
6
Pbfree Code
Part Package Code
D2PAK
Pin Count
4
Samacsys Manufacturer
Infineon
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Qualification Status
Not Qualified
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Compare IPB65R110CFD7 with alternatives
Compare IPB65R110CFD with alternatives