IPB60R199CPA
vs
TK16G60W
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Obsolete
Active
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
TOSHIBA CORP
Part Package Code
D2PAK
Package Description
TO-263, 3 PIN
SMALL OUTLINE, R-PSSO-G2
Pin Count
4
Reach Compliance Code
not_compliant
unknown
ECCN Code
EAR99
EAR99
Samacsys Manufacturer
Infineon
Toshiba
Avalanche Energy Rating (Eas)
436 mJ
194 mJ
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
600 V
600 V
Drain Current-Max (ID)
16 A
15.8 A
Drain-source On Resistance-Max
0.199 Ω
0.19 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-263AB
JESD-30 Code
R-PSSO-G2
R-PSSO-G2
JESD-609 Code
e3
Moisture Sensitivity Level
1
Number of Elements
1
1
Number of Terminals
2
2
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
175 °C
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Pulsed Drain Current-Max (IDM)
51 A
63.2 A
Qualification Status
Not Qualified
Surface Mount
YES
YES
Terminal Finish
Matte Tin (Sn)
Terminal Form
GULL WING
GULL WING
Terminal Position
SINGLE
SINGLE
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
1
Power Dissipation-Max (Abs)
130 W
Compare IPB60R199CPA with alternatives
Compare TK16G60W with alternatives