IPB45N06S4L08ATMA3
vs
STD12N05-1
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Not Recommended
Obsolete
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
STMICROELECTRONICS
Package Description
SMALL OUTLINE, R-PSSO-G2
TO-251, IPAK-3
Reach Compliance Code
not_compliant
not_compliant
ECCN Code
EAR99
EAR99
Factory Lead Time
12 Weeks
Samacsys Manufacturer
Infineon
Avalanche Energy Rating (Eas)
97 mJ
30 mJ
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
60 V
50 V
Drain Current-Max (ID)
45 A
12 A
Drain-source On Resistance-Max
0.0079 Ω
0.15 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-263AB
TO-251AA
JESD-30 Code
R-PSSO-G2
R-PSIP-T3
JESD-609 Code
e3
e0
Moisture Sensitivity Level
1
Number of Elements
1
1
Number of Terminals
2
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
IN-LINE
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Pulsed Drain Current-Max (IDM)
180 A
48 A
Surface Mount
YES
NO
Terminal Finish
Tin (Sn)
TIN LEAD
Terminal Form
GULL WING
THROUGH-HOLE
Terminal Position
SINGLE
SINGLE
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
1
Part Package Code
TO-251AA
Pin Count
3
Operating Temperature-Max
175 °C
Power Dissipation-Max (Abs)
45 W
Qualification Status
Not Qualified
Transistor Application
SWITCHING
Compare IPB45N06S4L08ATMA3 with alternatives
Compare STD12N05-1 with alternatives