IPB160N04S4-02D
vs
IPB160N04S402DXTMA1
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
INFINEON TECHNOLOGIES AG
Part Package Code
TO-263
Package Description
SMALL OUTLINE, R-PSSO-G6
SMALL OUTLINE, R-PSSO-G6
Pin Count
3
Reach Compliance Code
compliant
compliant
ECCN Code
EAR99
EAR99
Additional Feature
ULTRA-LOW RESISTANCE
ULTRA LOW RESISTANCE
Avalanche Energy Rating (Eas)
220 mJ
220 mJ
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
40 V
40 V
Drain Current-Max (ID)
160 A
160 A
Drain-source On Resistance-Max
0.0019 Ω
0.0019 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-263
TO-263
JESD-30 Code
R-PSSO-G6
R-PSSO-G6
Moisture Sensitivity Level
1
Number of Elements
1
1
Number of Terminals
6
6
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
175 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
231 W
Pulsed Drain Current-Max (IDM)
640 A
640 A
Surface Mount
YES
YES
Terminal Form
GULL WING
GULL WING
Terminal Position
SINGLE
SINGLE
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
1
Samacsys Manufacturer
Infineon
Reference Standard
AEC-Q101
Compare IPB160N04S4-02D with alternatives
Compare IPB160N04S402DXTMA1 with alternatives