IPB04N03LA
vs
IPB04N03LA
feature comparison
Part Life Cycle Code |
Obsolete
|
Active
|
Ihs Manufacturer |
INFINEON TECHNOLOGIES AG
|
ROCHESTER ELECTRONICS LLC
|
Part Package Code |
D2PAK
|
D2PAK
|
Package Description |
SMALL OUTLINE, R-PSSO-G2
|
PLASTIC, TO-263, 3 PIN
|
Pin Count |
4
|
4
|
Reach Compliance Code |
compliant
|
unknown
|
ECCN Code |
EAR99
|
|
Additional Feature |
LOGIC LEVEL COMPATIBLE
|
LOGIC LEVEL COMPATIBLE
|
Avalanche Energy Rating (Eas) |
290 mJ
|
290 mJ
|
Case Connection |
DRAIN
|
DRAIN
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
25 V
|
25 V
|
Drain Current-Max (ID) |
80 A
|
80 A
|
Drain-source On Resistance-Max |
0.0064 Ω
|
0.0064 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code |
TO-263AB
|
TO-263AB
|
JESD-30 Code |
R-PSSO-G2
|
R-PSSO-G2
|
JESD-609 Code |
e3
|
|
Number of Elements |
1
|
1
|
Number of Terminals |
2
|
2
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
175 °C
|
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation-Max (Abs) |
107 W
|
|
Pulsed Drain Current-Max (IDM) |
385 A
|
385 A
|
Qualification Status |
Not Qualified
|
COMMERCIAL
|
Surface Mount |
YES
|
YES
|
Terminal Finish |
MATTE TIN
|
MATTE TIN
|
Terminal Form |
GULL WING
|
GULL WING
|
Terminal Position |
SINGLE
|
SINGLE
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
3
|
2
|
|
|
|
Compare IPB04N03LA with alternatives
Compare IPB04N03LA with alternatives