IPB011N04LG
vs
IPB180N04S302ATMA1
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Active
End Of Life
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
INFINEON TECHNOLOGIES AG
Part Package Code
TO-263
Package Description
SMALL OUTLINE, R-PSSO-G6
SMALL OUTLINE, R-PSSO-G6
Pin Count
7
Reach Compliance Code
compliant
not_compliant
ECCN Code
EAR99
EAR99
Additional Feature
LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE
ULTRA LOW RESISTANCE
Avalanche Energy Rating (Eas)
525 mJ
1880 mJ
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
40 V
40 V
Drain Current-Max (ID)
180 A
180 A
Drain-source On Resistance-Max
0.0014 Ω
0.0015 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PSSO-G6
R-PSSO-G6
JESD-609 Code
e3
e3
Moisture Sensitivity Level
1
1
Number of Elements
1
1
Number of Terminals
6
6
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
175 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
250 W
Pulsed Drain Current-Max (IDM)
1260 A
720 A
Qualification Status
Not Qualified
Surface Mount
YES
YES
Terminal Finish
Tin (Sn)
Tin (Sn)
Terminal Form
GULL WING
GULL WING
Terminal Position
SINGLE
SINGLE
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Application
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
1
Factory Lead Time
4 Weeks
Samacsys Manufacturer
Infineon
JEDEC-95 Code
TO-263
Reference Standard
AEC-Q101
Compare IPB011N04LG with alternatives
Compare IPB180N04S302ATMA1 with alternatives