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IMS1624N-55M vs HM1-65789N-2 feature comparison

IMS1624N-55M Inmos Corporation

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HM1-65789N-2 Matra MHS

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Rohs Code No
Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer INMOS MATRA MHS
Reach Compliance Code unknown unknown
ECCN Code 3A001.A.2.C 3A001.A.2.C
HTS Code 8542.32.00.41 8542.32.00.41
Access Time-Max 55 ns 55 ns
I/O Type COMMON
JESD-30 Code R-XQCC-N28 R-GDIP-T24
JESD-609 Code e0
Memory Density 65536 bit 65536 bit
Memory IC Type STANDARD SRAM STANDARD SRAM
Memory Width 4 4
Number of Terminals 28 24
Number of Words 16384 words 16384 words
Number of Words Code 16000 16000
Operating Mode ASYNCHRONOUS ASYNCHRONOUS
Operating Temperature-Max 125 °C 125 °C
Operating Temperature-Min -55 °C -55 °C
Organization 16KX4 16KX4
Output Characteristics 3-STATE 3-STATE
Package Body Material CERAMIC CERAMIC, GLASS-SEALED
Package Code QCCN DIP
Package Equivalence Code LCC28,.35X.55
Package Shape RECTANGULAR RECTANGULAR
Package Style CHIP CARRIER IN-LINE
Parallel/Serial PARALLEL PARALLEL
Qualification Status Not Qualified Not Qualified
Screening Level 38535Q/M;38534H;883B MIL-STD-883 Class B
Standby Current-Max 0.019 A
Standby Voltage-Min 4.5 V
Supply Current-Max 0.1 mA
Supply Voltage-Nom (Vsup) 5 V 5 V
Surface Mount YES NO
Technology CMOS CMOS
Temperature Grade MILITARY MILITARY
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form NO LEAD THROUGH-HOLE
Terminal Pitch 1.27 mm
Terminal Position QUAD DUAL
Base Number Matches 2 2
Package Description ,
Number of Functions 1
Number of Ports 1
Output Enable YES
Supply Voltage-Max (Vsup) 5.5 V
Supply Voltage-Min (Vsup) 4.5 V
Memory » SRAMs
Memory » SRAMs

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