IM5116SDBBB-6IA
vs
SCE33S512160AE-75BA2
feature comparison
Rohs Code |
No
|
|
Part Life Cycle Code |
Contact Manufacturer
|
Contact Manufacturer
|
Ihs Manufacturer |
I'M INTELLIGENT MEMORY LTD
|
XIAN UNILC SEMICONDUCTORS CO LTD
|
Package Description |
TFBGA,
|
TSOP2,
|
Reach Compliance Code |
unknown
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8542.32.00.28
|
8542.32.00.28
|
Access Mode |
FOUR BANK PAGE BURST
|
FOUR BANK PAGE BURST
|
Access Time-Max |
5.4 ns
|
5.4 ns
|
Additional Feature |
AUTO/SELF REFRESH
|
AUTO REFRESH
|
JESD-30 Code |
S-PBGA-B54
|
R-PDSO-G54
|
Length |
8 mm
|
22.22 mm
|
Memory Density |
536870912 bit
|
536870912 bit
|
Memory IC Type |
SYNCHRONOUS DRAM
|
SYNCHRONOUS DRAM
|
Memory Width |
16
|
16
|
Number of Functions |
1
|
1
|
Number of Ports |
1
|
1
|
Number of Terminals |
54
|
54
|
Number of Words |
33554432 words
|
33554432 words
|
Number of Words Code |
32000000
|
32000000
|
Operating Mode |
SYNCHRONOUS
|
SYNCHRONOUS
|
Operating Temperature-Max |
85 °C
|
105 °C
|
Operating Temperature-Min |
-40 °C
|
-40 °C
|
Organization |
32MX16
|
32MX16
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Code |
TFBGA
|
TSOP2
|
Package Shape |
SQUARE
|
RECTANGULAR
|
Package Style |
GRID ARRAY, THIN PROFILE, FINE PITCH
|
SMALL OUTLINE, THIN PROFILE
|
Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
Screening Level |
AEC-Q100
|
|
Seated Height-Max |
1.2 mm
|
1.2 mm
|
Self Refresh |
YES
|
|
Supply Voltage-Max (Vsup) |
3.6 V
|
3.6 V
|
Supply Voltage-Min (Vsup) |
3 V
|
3 V
|
Supply Voltage-Nom (Vsup) |
3.3 V
|
3.3 V
|
Surface Mount |
YES
|
YES
|
Technology |
CMOS
|
CMOS
|
Temperature Grade |
INDUSTRIAL
|
INDUSTRIAL
|
Terminal Form |
BALL
|
GULL WING
|
Terminal Pitch |
0.8 mm
|
0.8 mm
|
Terminal Position |
BOTTOM
|
DUAL
|
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
Width |
8 mm
|
10.16 mm
|
Base Number Matches |
1
|
1
|
|
|
|
Compare IM5116SDBBB-6IA with alternatives
Compare SCE33S512160AE-75BA2 with alternatives