IHW20T120 vs SGW6N60UFD feature comparison

IHW20T120 Infineon Technologies AG

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SGW6N60UFD Samsung Semiconductor

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Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG SAMSUNG SEMICONDUCTOR INC
Part Package Code TO-247AC D2PAK
Package Description FLANGE MOUNT, R-PSFM-T3 SMALL OUTLINE, R-PSSO-G2
Pin Count 3 3
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
Case Connection COLLECTOR
Collector Current-Max (IC) 40 A 6 A
Collector-Emitter Voltage-Max 1200 V 600 V
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Gate-Emitter Thr Voltage-Max 6.5 V 7.5 V
Gate-Emitter Voltage-Max 20 V 20 V
JEDEC-95 Code TO-247AC
JESD-30 Code R-PSFM-T3 R-PSSO-G2
JESD-609 Code e3
Number of Elements 1 1
Number of Terminals 3 2
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 178 W 30 W
Qualification Status Not Qualified Not Qualified
Surface Mount NO YES
Terminal Finish TIN
Terminal Form THROUGH-HOLE GULL WING
Terminal Position SINGLE SINGLE
Transistor Application POWER CONTROL MOTOR CONTROL
Transistor Element Material SILICON SILICON
Turn-off Time-Nom (toff) 790 ns 120 ns
Turn-on Time-Nom (ton) 82 ns 37 ns
Base Number Matches 2 1
Additional Feature HIGH SPEED SWITCHING
Fall Time-Max (tf) 280 ns

Compare IHW20T120 with alternatives

Compare SGW6N60UFD with alternatives