IGB30N60H3ATMA1
vs
APT36GA60B
feature comparison
| Pbfree Code |
No
|
Yes
|
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Active
|
Transferred
|
| Ihs Manufacturer |
INFINEON TECHNOLOGIES AG
|
MICROSEMI CORP
|
| Part Package Code |
D2PAK
|
TO-247AD
|
| Package Description |
SMALL OUTLINE, R-PSSO-G2
|
ROHS COMPLIANT, TO-247, 3 PIN
|
| Pin Count |
4
|
3
|
| Reach Compliance Code |
not_compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Factory Lead Time |
16 Weeks, 5 Days
|
|
| Samacsys Manufacturer |
Infineon
|
Microsemi Corporation
|
| Case Connection |
COLLECTOR
|
COLLECTOR
|
| Collector Current-Max (IC) |
60 A
|
65 A
|
| Collector-Emitter Voltage-Max |
600 V
|
600 V
|
| Configuration |
SINGLE
|
SINGLE
|
| JEDEC-95 Code |
TO-263AB
|
TO-247AD
|
| JESD-30 Code |
R-PSSO-G2
|
R-PSFM-T3
|
| JESD-609 Code |
e3
|
|
| Moisture Sensitivity Level |
1
|
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
3
|
| Operating Temperature-Max |
175 °C
|
150 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
FLANGE MOUNT
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
YES
|
NO
|
| Terminal Finish |
Tin (Sn)
|
PURE MATTE TIN
|
| Terminal Form |
GULL WING
|
THROUGH-HOLE
|
| Terminal Position |
SINGLE
|
SINGLE
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
| Transistor Application |
POWER CONTROL
|
POWER CONTROL
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Turn-off Time-Nom (toff) |
262 ns
|
262 ns
|
| Turn-on Time-Nom (ton) |
40 ns
|
29 ns
|
| Base Number Matches |
1
|
2
|
| Additional Feature |
|
LOW CONDUCTION LOSS
|
| Gate-Emitter Thr Voltage-Max |
|
6 V
|
| Gate-Emitter Voltage-Max |
|
30 V
|
| Power Dissipation-Max (Abs) |
|
290 W
|
|
|
|
Compare IGB30N60H3ATMA1 with alternatives
Compare APT36GA60B with alternatives