IDT79R2010AB12QJB
vs
IDT79R3010AE25GB
feature comparison
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
INTEGRATED DEVICE TECHNOLOGY INC
|
INTEGRATED DEVICE TECHNOLOGY INC
|
| Part Package Code |
QFN
|
PGA
|
| Package Description |
QCCJ,
|
CAVITY DOWN, CERAMIC, PGA-84
|
| Pin Count |
84
|
84
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
3A001.A.2.C
|
|
| HTS Code |
8542.31.00.01
|
|
| Address Bus Width |
|
|
| Boundary Scan |
NO
|
NO
|
| Bus Compatibility |
IDT79R2000A
|
R3000A; R3001
|
| Clock Frequency-Max |
12.5 MHz
|
50 MHz
|
| External Data Bus Width |
32
|
32
|
| JESD-30 Code |
S-GQCC-J84
|
S-CPGA-P84
|
| JESD-609 Code |
e0
|
e0
|
| Length |
29.21 mm
|
30.6705 mm
|
| Number of Terminals |
84
|
84
|
| Operating Temperature-Max |
125 °C
|
125 °C
|
| Operating Temperature-Min |
-55 °C
|
-55 °C
|
| Package Body Material |
CERAMIC, GLASS-SEALED
|
CERAMIC, METAL-SEALED COFIRED
|
| Package Code |
QCCJ
|
PGA
|
| Package Shape |
SQUARE
|
SQUARE
|
| Package Style |
CHIP CARRIER
|
GRID ARRAY
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Seated Height-Max |
5.08 mm
|
5.207 mm
|
| Supply Voltage-Max |
5.5 V
|
5.5 V
|
| Supply Voltage-Min |
4.5 V
|
4.5 V
|
| Supply Voltage-Nom |
5 V
|
5 V
|
| Surface Mount |
YES
|
NO
|
| Technology |
CMOS
|
CMOS
|
| Temperature Grade |
MILITARY
|
MILITARY
|
| Terminal Finish |
TIN LEAD
|
TIN LEAD
|
| Terminal Form |
J BEND
|
PIN/PEG
|
| Terminal Pitch |
1.27 mm
|
2.54 mm
|
| Terminal Position |
QUAD
|
PERPENDICULAR
|
| Width |
29.21 mm
|
30.6705 mm
|
| uPs/uCs/Peripheral ICs Type |
MATH PROCESSOR, FLOATING POINT ACCELERATOR
|
MATH PROCESSOR, FLOATING POINT ACCELERATOR
|
| Base Number Matches |
1
|
1
|
| Rohs Code |
|
No
|
| Barrel Shifter |
|
NO
|
| Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
| Supply Current-Max |
|
700 mA
|
| Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
|
|
|
Compare IDT79R2010AB12QJB with alternatives
Compare IDT79R3010AE25GB with alternatives