IDT71T75602S200BGI vs CY7C1370DV25-200BGI feature comparison

IDT71T75602S200BGI Integrated Device Technology Inc

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CY7C1370DV25-200BGI Cypress Semiconductor

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Rohs Code No No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer INTEGRATED DEVICE TECHNOLOGY INC CYPRESS SEMICONDUCTOR CORP
Part Package Code BGA BGA
Package Description 14 X 22 MM, MS-028-AA, BGA-119 14 X 22 MM, 2.40 MM HEIGHT, BGA-119
Pin Count 119 119
Reach Compliance Code not_compliant compliant
ECCN Code 3A991.B.2.A 3A991.B.2.A
HTS Code 8542.32.00.41 8542.32.00.41
Access Time-Max 3.2 ns 3 ns
Additional Feature PIPELINED ARCHITECTURE PIPELINED ARCHITECTURE
Clock Frequency-Max (fCLK) 200 MHz 200 MHz
I/O Type COMMON COMMON
JESD-30 Code R-PBGA-B119 R-PBGA-B119
JESD-609 Code e0 e0
Length 22 mm 22 mm
Memory Density 18874368 bit 18874368 bit
Memory IC Type ZBT SRAM ZBT SRAM
Memory Width 36 36
Moisture Sensitivity Level 3
Number of Functions 1 1
Number of Terminals 119 119
Number of Words 524288 words 524288 words
Number of Words Code 512000 512000
Operating Mode SYNCHRONOUS SYNCHRONOUS
Operating Temperature-Max 85 °C 85 °C
Operating Temperature-Min -40 °C -40 °C
Organization 512KX36 512KX36
Output Characteristics 3-STATE 3-STATE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code BGA BGA
Package Equivalence Code BGA119,7X17,50 BGA119,7X17,50
Package Shape RECTANGULAR RECTANGULAR
Package Style GRID ARRAY GRID ARRAY
Parallel/Serial PARALLEL PARALLEL
Peak Reflow Temperature (Cel) 225
Qualification Status Not Qualified Not Qualified
Seated Height-Max 2.36 mm 2.4 mm
Standby Voltage-Min 2.38 V 2.38 V
Supply Voltage-Max (Vsup) 2.625 V 2.625 V
Supply Voltage-Min (Vsup) 2.375 V 2.375 V
Supply Voltage-Nom (Vsup) 2.5 V 2.5 V
Surface Mount YES YES
Technology CMOS CMOS
Temperature Grade INDUSTRIAL INDUSTRIAL
Terminal Finish TIN LEAD TIN LEAD
Terminal Form BALL BALL
Terminal Pitch 1.27 mm 1.27 mm
Terminal Position BOTTOM BOTTOM
Time@Peak Reflow Temperature-Max (s) 20
Width 14 mm 14 mm
Base Number Matches 1 1
Standby Current-Max 0.07 A
Supply Current-Max 0.3 mA

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