IDT71589S25D
vs
M5M52B79P-12
feature comparison
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
INTEGRATED DEVICE TECHNOLOGY INC
|
MITSUBISHI ELECTRIC CORP
|
| Part Package Code |
DIP
|
DIP
|
| Package Description |
DIP,
|
DIP, DIP32,.3
|
| Pin Count |
32
|
32
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
3A991.B.2.B
|
3A991.B.2.B
|
| HTS Code |
8542.32.00.41
|
8542.32.00.41
|
| Access Time-Max |
24 ns
|
12 ns
|
| JESD-30 Code |
R-GDIP-T32
|
R-PDIP-T32
|
| JESD-609 Code |
e0
|
e0
|
| Memory Density |
294912 bit
|
294912 bit
|
| Memory IC Type |
CACHE TAG SRAM
|
STANDARD SRAM
|
| Memory Width |
9
|
9
|
| Number of Functions |
1
|
1
|
| Number of Ports |
1
|
1
|
| Number of Terminals |
32
|
32
|
| Number of Words |
32768 words
|
32768 words
|
| Number of Words Code |
32000
|
32000
|
| Operating Mode |
SYNCHRONOUS
|
ASYNCHRONOUS
|
| Operating Temperature-Max |
70 °C
|
70 °C
|
| Operating Temperature-Min |
|
|
| Organization |
32KX9
|
32KX9
|
| Output Characteristics |
3-STATE
|
3-STATE
|
| Output Enable |
YES
|
YES
|
| Package Body Material |
CERAMIC, GLASS-SEALED
|
PLASTIC/EPOXY
|
| Package Code |
DIP
|
DIP
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
IN-LINE
|
IN-LINE
|
| Parallel/Serial |
PARALLEL
|
PARALLEL
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Supply Voltage-Max (Vsup) |
5.5 V
|
5.5 V
|
| Supply Voltage-Min (Vsup) |
4.5 V
|
4.5 V
|
| Supply Voltage-Nom (Vsup) |
5 V
|
5 V
|
| Surface Mount |
NO
|
NO
|
| Technology |
CMOS
|
BICMOS
|
| Temperature Grade |
COMMERCIAL
|
COMMERCIAL
|
| Terminal Finish |
TIN LEAD
|
TIN LEAD
|
| Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
| Terminal Position |
DUAL
|
DUAL
|
| Base Number Matches |
1
|
1
|
| Pbfree Code |
|
No
|
| Rohs Code |
|
No
|
| I/O Type |
|
COMMON
|
| Package Equivalence Code |
|
DIP32,.3
|
| Supply Current-Max |
|
0.175 mA
|
| Terminal Pitch |
|
2.54 mm
|
|
|
|
Compare IDT71589S25D with alternatives
Compare M5M52B79P-12 with alternatives