IDT7140SA25JI8
vs
IDT7140LA25JB8
feature comparison
All Stats
Differences Only
Pbfree Code
No
No
Rohs Code
No
No
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
INTEGRATED DEVICE TECHNOLOGY INC
INTEGRATED DEVICE TECHNOLOGY INC
Reach Compliance Code
not_compliant
not_compliant
ECCN Code
EAR99
3A001.A.2.C
HTS Code
8542.32.00.41
8542.32.00.41
Access Time-Max
25 ns
25 ns
I/O Type
COMMON
COMMON
JESD-30 Code
S-PQCC-J52
S-PQCC-J52
JESD-609 Code
e0
e0
Memory Density
8192 bit
8192 bit
Memory IC Type
MULTI-PORT SRAM
MULTI-PORT SRAM
Memory Width
8
8
Moisture Sensitivity Level
3
1
Number of Ports
2
2
Number of Terminals
52
52
Number of Words
1024 words
1024 words
Number of Words Code
1000
1000
Operating Mode
ASYNCHRONOUS
ASYNCHRONOUS
Operating Temperature-Max
85 °C
125 °C
Operating Temperature-Min
-40 °C
-55 °C
Organization
1KX8
1KX8
Output Characteristics
3-STATE
3-STATE
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Code
QCCJ
QCCJ
Package Equivalence Code
LDCC52,.8SQ
LDCC52,.8SQ
Package Shape
SQUARE
SQUARE
Package Style
CHIP CARRIER
CHIP CARRIER
Parallel/Serial
PARALLEL
PARALLEL
Peak Reflow Temperature (Cel)
225
225
Qualification Status
Not Qualified
Not Qualified
Standby Current-Max
0.03 A
0.004 A
Standby Voltage-Min
4.5 V
2 V
Supply Current-Max
0.28 mA
0.22 mA
Supply Voltage-Nom (Vsup)
5 V
5 V
Surface Mount
YES
YES
Technology
CMOS
CMOS
Temperature Grade
INDUSTRIAL
MILITARY
Terminal Finish
TIN LEAD
TIN LEAD
Terminal Form
J BEND
J BEND
Terminal Pitch
1.27 mm
1.27 mm
Terminal Position
QUAD
QUAD
Time@Peak Reflow Temperature-Max (s)
20
20
Base Number Matches
1
1
Screening Level
38535Q/M;38534H;883B
Compare IDT7140SA25JI8 with alternatives
Compare IDT7140LA25JB8 with alternatives