IDT7130SA55JGB8 vs 7130LA55JGB8 feature comparison

IDT7130SA55JGB8 Integrated Device Technology Inc

Buy Now Datasheet

7130LA55JGB8 Integrated Device Technology Inc

Buy Now Datasheet
Pbfree Code Yes Yes
Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer INTEGRATED DEVICE TECHNOLOGY INC INTEGRATED DEVICE TECHNOLOGY INC
Reach Compliance Code unknown compliant
ECCN Code 3A001.A.2.C 3A001.A.2.C
HTS Code 8542.32.00.41 8542.32.00.41
Access Time-Max 55 ns 55 ns
I/O Type COMMON COMMON
JESD-30 Code S-PQCC-J52 S-PQCC-J52
JESD-609 Code e3 e3
Memory Density 8192 bit 8192 bit
Memory IC Type MULTI-PORT SRAM MULTI-PORT SRAM
Memory Width 8 8
Moisture Sensitivity Level 1 1
Number of Ports 2 2
Number of Terminals 52 52
Number of Words 1024 words 1024 words
Number of Words Code 1000 1000
Operating Mode ASYNCHRONOUS ASYNCHRONOUS
Operating Temperature-Max 125 °C 125 °C
Operating Temperature-Min -55 °C -55 °C
Organization 1KX8 1KX8
Output Characteristics 3-STATE 3-STATE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code QCCJ QCCJ
Package Equivalence Code LDCC52,.8SQ LDCC52,.8SQ
Package Shape SQUARE SQUARE
Package Style CHIP CARRIER CHIP CARRIER
Parallel/Serial PARALLEL PARALLEL
Peak Reflow Temperature (Cel) 260 260
Qualification Status Not Qualified Not Qualified
Screening Level 38535Q/M;38534H;883B MIL-PRF-38535 Class Q
Standby Current-Max 0.03 A 0.004 A
Standby Voltage-Min 4.5 V 2 V
Supply Current-Max 0.19 mA 0.14 mA
Supply Voltage-Nom (Vsup) 5 V 5 V
Surface Mount YES YES
Technology CMOS CMOS
Temperature Grade MILITARY MILITARY
Terminal Finish Matte Tin (Sn) - annealed Matte Tin (Sn) - annealed
Terminal Form J BEND J BEND
Terminal Pitch 1.27 mm 1.27 mm
Terminal Position QUAD QUAD
Time@Peak Reflow Temperature-Max (s) 30 30
Base Number Matches 1 1
Part Package Code LCC
Package Description QCCJ, LDCC52,.8SQ
Pin Count 52
Number of Functions 1
Supply Voltage-Max (Vsup) 5.5 V
Supply Voltage-Min (Vsup) 4.5 V

Compare IDT7130SA55JGB8 with alternatives

Compare 7130LA55JGB8 with alternatives