IDT7130SA35JGB8 vs 7130LA35JB8 feature comparison

IDT7130SA35JGB8 Integrated Device Technology Inc

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7130LA35JB8 Integrated Device Technology Inc

Buy Now Datasheet
Pbfree Code Yes No
Rohs Code Yes No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer INTEGRATED DEVICE TECHNOLOGY INC INTEGRATED DEVICE TECHNOLOGY INC
Reach Compliance Code unknown not_compliant
ECCN Code 3A001.A.2.C 3A001.A.2.C
HTS Code 8542.32.00.41 8542.32.00.41
Access Time-Max 35 ns 35 ns
I/O Type COMMON COMMON
JESD-30 Code S-PQCC-J52 S-PQCC-J52
JESD-609 Code e3 e0
Memory Density 8192 bit 8192 bit
Memory IC Type MULTI-PORT SRAM MULTI-PORT SRAM
Memory Width 8 8
Moisture Sensitivity Level 1 1
Number of Ports 2 2
Number of Terminals 52 52
Number of Words 1024 words 1024 words
Number of Words Code 1000 1000
Operating Mode ASYNCHRONOUS ASYNCHRONOUS
Operating Temperature-Max 125 °C 125 °C
Operating Temperature-Min -55 °C -55 °C
Organization 1KX8 1KX8
Output Characteristics 3-STATE 3-STATE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code QCCJ QCCJ
Package Equivalence Code LDCC52,.8SQ LDCC52,.8SQ
Package Shape SQUARE SQUARE
Package Style CHIP CARRIER CHIP CARRIER
Parallel/Serial PARALLEL PARALLEL
Peak Reflow Temperature (Cel) 260 225
Qualification Status Not Qualified Not Qualified
Screening Level 38535Q/M;38534H;883B 38535Q/M;38534H;883B
Standby Current-Max 0.03 A 0.004 A
Standby Voltage-Min 4.5 V 2 V
Supply Current-Max 0.23 mA 0.17 mA
Supply Voltage-Nom (Vsup) 5 V 5 V
Surface Mount YES YES
Technology CMOS CMOS
Temperature Grade MILITARY MILITARY
Terminal Finish Matte Tin (Sn) - annealed TIN LEAD
Terminal Form J BEND J BEND
Terminal Pitch 1.27 mm 1.27 mm
Terminal Position QUAD QUAD
Time@Peak Reflow Temperature-Max (s) 30 20
Base Number Matches 1 1

Compare IDT7130SA35JGB8 with alternatives

Compare 7130LA35JB8 with alternatives