IDT7130LA55JI8 vs IDT7130SA55JG8 feature comparison

IDT7130LA55JI8 Integrated Device Technology Inc

Buy Now Datasheet

IDT7130SA55JG8 Integrated Device Technology Inc

Buy Now Datasheet
Pbfree Code No Yes
Rohs Code No Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer INTEGRATED DEVICE TECHNOLOGY INC INTEGRATED DEVICE TECHNOLOGY INC
Reach Compliance Code not_compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.41 8542.32.00.41
Access Time-Max 55 ns 55 ns
I/O Type COMMON COMMON
JESD-30 Code S-PQCC-J52 S-PQCC-J52
JESD-609 Code e0 e3
Memory Density 8192 bit 8192 bit
Memory IC Type MULTI-PORT SRAM MULTI-PORT SRAM
Memory Width 8 8
Moisture Sensitivity Level 3 1
Number of Ports 2 2
Number of Terminals 52 52
Number of Words 1024 words 1024 words
Number of Words Code 1000 1000
Operating Mode ASYNCHRONOUS ASYNCHRONOUS
Operating Temperature-Max 85 °C 70 °C
Operating Temperature-Min -40 °C
Organization 1KX8 1KX8
Output Characteristics 3-STATE 3-STATE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code QCCJ QCCJ
Package Equivalence Code LDCC52,.8SQ LDCC52,.8SQ
Package Shape SQUARE SQUARE
Package Style CHIP CARRIER CHIP CARRIER
Parallel/Serial PARALLEL PARALLEL
Peak Reflow Temperature (Cel) 225 260
Qualification Status Not Qualified Not Qualified
Standby Current-Max 0.004 A 0.015 A
Standby Voltage-Min 2 V 4.5 V
Supply Current-Max 0.14 mA 0.155 mA
Supply Voltage-Nom (Vsup) 5 V 5 V
Surface Mount YES YES
Technology CMOS CMOS
Temperature Grade INDUSTRIAL COMMERCIAL
Terminal Finish TIN LEAD Matte Tin (Sn) - annealed
Terminal Form J BEND J BEND
Terminal Pitch 1.27 mm 1.27 mm
Terminal Position QUAD QUAD
Time@Peak Reflow Temperature-Max (s) 20 30
Base Number Matches 1 1

Compare IDT7130LA55JI8 with alternatives

Compare IDT7130SA55JG8 with alternatives