IDT70T659S12DR8
vs
IDT70T659S12DRG8
feature comparison
All Stats
Differences Only
Pbfree Code
No
Yes
Rohs Code
No
Yes
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
INTEGRATED DEVICE TECHNOLOGY INC
INTEGRATED DEVICE TECHNOLOGY INC
Reach Compliance Code
not_compliant
compliant
ECCN Code
3A991.B.2.A
3A991.B.2.A
HTS Code
8542.32.00.41
8542.32.00.41
Access Time-Max
12 ns
12 ns
I/O Type
COMMON
COMMON
JESD-30 Code
S-PQFP-G208
S-PQFP-G208
JESD-609 Code
e0
e3
Memory Density
4718592 bit
4718592 bit
Memory IC Type
MULTI-PORT SRAM
MULTI-PORT SRAM
Memory Width
36
36
Number of Ports
2
2
Number of Terminals
208
208
Number of Words
131072 words
131072 words
Number of Words Code
128000
128000
Operating Mode
ASYNCHRONOUS
ASYNCHRONOUS
Operating Temperature-Max
70 °C
70 °C
Operating Temperature-Min
Organization
128KX36
128KX36
Output Characteristics
3-STATE
3-STATE
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Code
QFP
QFP
Package Equivalence Code
QFP208,1.2SQ,20
QFP208,1.2SQ,20
Package Shape
SQUARE
SQUARE
Package Style
FLATPACK
FLATPACK
Parallel/Serial
PARALLEL
PARALLEL
Qualification Status
Not Qualified
Not Qualified
Standby Current-Max
0.01 A
0.01 A
Standby Voltage-Min
2.4 V
2.4 V
Supply Current-Max
0.355 mA
0.355 mA
Surface Mount
YES
YES
Technology
CMOS
CMOS
Temperature Grade
COMMERCIAL
COMMERCIAL
Terminal Finish
TIN LEAD
Matte Tin (Sn)
Terminal Form
GULL WING
GULL WING
Terminal Pitch
0.5 mm
0.5 mm
Terminal Position
QUAD
QUAD
Base Number Matches
1
1
Moisture Sensitivity Level
3
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Compare IDT70T659S12DR8 with alternatives
Compare IDT70T659S12DRG8 with alternatives