HZU6.8B2TRF-E vs GDZ6.8B_AX_10001 feature comparison

HZU6.8B2TRF-E Renesas Electronics Corporation

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GDZ6.8B_AX_10001 PanJit Semiconductor

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Pbfree Code Yes Yes
Rohs Code Yes Yes
Part Life Cycle Code Obsolete Not Recommended
Ihs Manufacturer RENESAS ELECTRONICS CORP PAN JIT INTERNATIONAL INC
Part Package Code URP
Pin Count 2
Manufacturer Package Code PTSP0002ZA-A2
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Factory Lead Time 4 Weeks
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type ZENER DIODE ZENER DIODE
Dynamic Impedance-Max 30 Ω 8 Ω
JESD-30 Code R-PDSO-G2 O-LALF-W2
JESD-609 Code e6
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 175 °C
Package Body Material PLASTIC/EPOXY GLASS
Package Shape RECTANGULAR ROUND
Package Style SMALL OUTLINE LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 0.2 W 0.5 W
Qualification Status Not Qualified
Reference Voltage-Nom 6.79 V 6.8 V
Surface Mount YES NO
Technology ZENER ZENER
Terminal Finish TIN BISMUTH
Terminal Form GULL WING WIRE
Terminal Position DUAL AXIAL
Voltage Tol-Max 2.06% 2.55%
Working Test Current 5 mA 20 mA
Base Number Matches 1 1
Package Description O-LALF-W2
Case Connection ISOLATED
Forward Voltage-Max (VF) 1 V
JEDEC-95 Code DO-34
Knee Impedance-Max 150 Ω
Reverse Current-Max 2 µA
Reverse Test Voltage 3.5 V

Compare HZU6.8B2TRF-E with alternatives

Compare GDZ6.8B_AX_10001 with alternatives