HYS64T64000HU-2.5-B
vs
M378T6464AZ3-CCC
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
QIMONDA AG
SAMSUNG SEMICONDUCTOR INC
Part Package Code
DIMM
DIMM
Package Description
DIMM, DIMM240,40
DIMM, DIMM240,40
Pin Count
240
240
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8542.32.00.36
8542.32.00.36
Access Mode
SINGLE BANK PAGE BURST
SINGLE BANK PAGE BURST
Access Time-Max
0.4 ns
0.6 ns
Additional Feature
AUTO/SELF REFRESH
AUTO/SELF REFRESH
Clock Frequency-Max (fCLK)
400 MHz
200 MHz
I/O Type
COMMON
COMMON
JESD-30 Code
R-XDMA-N240
R-XDMA-N240
Memory Density
4294967296 bit
4294967296 bit
Memory IC Type
DDR DRAM MODULE
DDR DRAM MODULE
Memory Width
64
64
Number of Functions
1
1
Number of Ports
1
1
Number of Terminals
240
240
Number of Words
67108864 words
67108864 words
Number of Words Code
64000000
64000000
Operating Mode
SYNCHRONOUS
SYNCHRONOUS
Operating Temperature-Max
65 °C
95 °C
Operating Temperature-Min
Organization
64MX64
64MX64
Output Characteristics
3-STATE
3-STATE
Package Body Material
UNSPECIFIED
UNSPECIFIED
Package Code
DIMM
DIMM
Package Equivalence Code
DIMM240,40
DIMM240,40
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
MICROELECTRONIC ASSEMBLY
MICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Cel)
NOT SPECIFIED
NOT SPECIFIED
Qualification Status
Not Qualified
Not Qualified
Refresh Cycles
8192
8192
Self Refresh
YES
YES
Standby Current-Max
0.06 A
0.06 A
Supply Current-Max
1.28 mA
1.32 mA
Supply Voltage-Max (Vsup)
1.9 V
1.9 V
Supply Voltage-Min (Vsup)
1.7 V
1.7 V
Supply Voltage-Nom (Vsup)
1.8 V
1.8 V
Surface Mount
NO
NO
Technology
CMOS
CMOS
Temperature Grade
COMMERCIAL
OTHER
Terminal Form
NO LEAD
NO LEAD
Terminal Pitch
1 mm
1 mm
Terminal Position
DUAL
DUAL
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
NOT SPECIFIED
Base Number Matches
2
1
Compare HYS64T64000HU-2.5-B with alternatives
Compare M378T6464AZ3-CCC with alternatives