HYS64D32020GU-8-A vs M470L3224HU0-LB3 feature comparison

HYS64D32020GU-8-A Qimonda AG

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M470L3224HU0-LB3 Samsung Semiconductor

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Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer QIMONDA AG SAMSUNG SEMICONDUCTOR INC
Package Description DIMM, DIMM184 DIMM, DIMM200,24
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.36 8542.32.00.36
Access Time-Max 0.8 ns 0.7 ns
Clock Frequency-Max (fCLK) 125 MHz 166 MHz
I/O Type COMMON COMMON
JESD-30 Code R-PDMA-N184 R-XDMA-N184
Memory Density 2147483648 bit 2147483648 bit
Memory IC Type DDR DRAM MODULE DDR DRAM MODULE
Memory Width 64 64
Number of Terminals 184 184
Number of Words 33554432 words 33554432 words
Number of Words Code 32000000 32000000
Operating Temperature-Max 70 °C 70 °C
Operating Temperature-Min
Organization 32MX64 32MX64
Output Characteristics 3-STATE 3-STATE
Package Body Material PLASTIC/EPOXY UNSPECIFIED
Package Code DIMM DIMM
Package Equivalence Code DIMM184 DIMM200,24
Package Shape RECTANGULAR RECTANGULAR
Package Style MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY
Qualification Status Not Qualified Not Qualified
Refresh Cycles 4096 8192
Supply Current-Max 2.44 mA 1.54 mA
Supply Voltage-Nom (Vsup) 2.5 V 2.5 V
Surface Mount NO NO
Technology CMOS CMOS
Temperature Grade COMMERCIAL COMMERCIAL
Terminal Form NO LEAD NO LEAD
Terminal Pitch 1.27 mm 0.6 mm
Terminal Position DUAL DUAL
Base Number Matches 2 1
Rohs Code Yes
Part Package Code DIMM
Pin Count 184
Access Mode DUAL BANK PAGE BURST
Additional Feature AUTO/SELF REFRESH
Number of Functions 1
Number of Ports 1
Operating Mode SYNCHRONOUS
Peak Reflow Temperature (Cel) NOT SPECIFIED
Self Refresh YES
Standby Current-Max 0.012 A
Supply Voltage-Max (Vsup) 2.7 V
Supply Voltage-Min (Vsup) 2.3 V
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

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