HYMP532S64CLP6-C4 vs M368L3223FTN-LCC feature comparison

HYMP532S64CLP6-C4 SK Hynix Inc

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M368L3223FTN-LCC Samsung Semiconductor

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Pbfree Code Yes
Rohs Code Yes No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SK HYNIX INC SAMSUNG SEMICONDUCTOR INC
Part Package Code DIMM DIMM
Package Description DIMM, DIMM200,24 DIMM, DIMM184
Pin Count 200 184
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.36 8542.32.00.36
Access Mode SINGLE BANK PAGE BURST SINGLE BANK PAGE BURST
Access Time-Max 0.5 ns 0.65 ns
Additional Feature AUTO/SELF REFRESH AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 267 MHz 200 MHz
I/O Type COMMON COMMON
JESD-30 Code R-XDMA-N200 R-XDMA-N184
Length 67.6 mm
Memory Density 2147483648 bit 2147483648 bit
Memory IC Type DDR DRAM MODULE DDR DRAM MODULE
Memory Width 64 64
Number of Functions 1 1
Number of Ports 1 1
Number of Terminals 200 184
Number of Words 33554432 words 33554432 words
Number of Words Code 32000000 32000000
Operating Mode SYNCHRONOUS SYNCHRONOUS
Operating Temperature-Max 55 °C 70 °C
Operating Temperature-Min
Organization 32MX64 32MX64
Output Characteristics 3-STATE 3-STATE
Package Body Material UNSPECIFIED UNSPECIFIED
Package Code DIMM DIMM
Package Equivalence Code DIMM200,24 DIMM184
Package Shape RECTANGULAR RECTANGULAR
Package Style MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Cel) 260
Qualification Status Not Qualified Not Qualified
Refresh Cycles 8192 8192
Self Refresh YES YES
Supply Current-Max 1.28 mA 2.8 mA
Supply Voltage-Max (Vsup) 1.9 V 2.7 V
Supply Voltage-Min (Vsup) 1.7 V 2.5 V
Supply Voltage-Nom (Vsup) 1.8 V 2.6 V
Surface Mount NO NO
Technology CMOS CMOS
Temperature Grade COMMERCIAL COMMERCIAL
Terminal Form NO LEAD NO LEAD
Terminal Pitch 0.6 mm 1.27 mm
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 20
Base Number Matches 1 1
Moisture Sensitivity Level 1

Compare HYMP532S64CLP6-C4 with alternatives

Compare M368L3223FTN-LCC with alternatives