HYMP164U64CP6-Y5 vs M378T6553BZ0-CE6 feature comparison

HYMP164U64CP6-Y5 SK Hynix Inc

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M378T6553BZ0-CE6 Samsung Semiconductor

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SK HYNIX INC SAMSUNG SEMICONDUCTOR INC
Part Package Code DIMM DIMM
Package Description DIMM, DIMM240,40 DIMM, DIMM240,40
Pin Count 240 240
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.36 8542.32.00.36
Access Mode SINGLE BANK PAGE BURST FOUR BANK PAGE BURST
Access Time-Max 0.45 ns 0.45 ns
Additional Feature AUTO/SELF REFRESH AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 333 MHz 333 MHz
I/O Type COMMON COMMON
JESD-30 Code R-XZMA-N240 R-XDMA-N240
Memory Density 4294967296 bit 4294967296 bit
Memory IC Type DDR DRAM MODULE DDR DRAM MODULE
Memory Width 64 64
Number of Functions 1 1
Number of Ports 1 1
Number of Terminals 240 240
Number of Words 67108864 words 67108864 words
Number of Words Code 64000000 64000000
Operating Mode SYNCHRONOUS SYNCHRONOUS
Operating Temperature-Max 55 °C 95 °C
Operating Temperature-Min
Organization 64MX64 64MX64
Output Characteristics 3-STATE 3-STATE
Package Body Material UNSPECIFIED UNSPECIFIED
Package Code DIMM DIMM
Package Equivalence Code DIMM240,40 DIMM240,40
Package Shape RECTANGULAR RECTANGULAR
Package Style MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Cel) 260
Qualification Status Not Qualified Not Qualified
Refresh Cycles 8192 8192
Self Refresh YES YES
Standby Current-Max 0.04 A 0.064 A
Supply Current-Max 1.06 mA 2.24 mA
Supply Voltage-Max (Vsup) 1.9 V 1.9 V
Supply Voltage-Min (Vsup) 1.7 V 1.7 V
Supply Voltage-Nom (Vsup) 1.8 V 1.8 V
Surface Mount NO NO
Technology CMOS CMOS
Temperature Grade COMMERCIAL OTHER
Terminal Form NO LEAD NO LEAD
Terminal Pitch 1 mm 1 mm
Terminal Position ZIG-ZAG DUAL
Time@Peak Reflow Temperature-Max (s) 20
Base Number Matches 1 1
Moisture Sensitivity Level 2

Compare HYMP164U64CP6-Y5 with alternatives

Compare M378T6553BZ0-CE6 with alternatives