HYMD232M646DP8-K
vs
M470L3324BT0-LB0
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
SK HYNIX INC
SAMSUNG SEMICONDUCTOR INC
Part Package Code
MODULE
SODIMM
Package Description
DIMM, DIMM200,24
DIMM, DIMM200,24
Pin Count
200
200
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
EAR99
HTS Code
8542.32.00.36
8542.32.00.36
Access Mode
SINGLE BANK PAGE BURST
SINGLE BANK PAGE BURST
Access Time-Max
0.75 ns
0.75 ns
Additional Feature
AUTO/SELF REFRESH
AUTO/SELF REFRESH
Clock Frequency-Max (fCLK)
133 MHz
133 MHz
I/O Type
COMMON
COMMON
JESD-30 Code
R-XDMA-N200
R-XZMA-N200
Memory Density
2147483648 bit
2147483648 bit
Memory IC Type
DDR DRAM MODULE
DDR DRAM MODULE
Memory Width
64
64
Number of Functions
1
1
Number of Ports
1
1
Number of Terminals
200
200
Number of Words
33554432 words
33554432 words
Number of Words Code
32000000
32000000
Operating Mode
SYNCHRONOUS
SYNCHRONOUS
Operating Temperature-Max
70 °C
70 °C
Operating Temperature-Min
Organization
32MX64
32MX64
Output Characteristics
3-STATE
3-STATE
Package Body Material
UNSPECIFIED
UNSPECIFIED
Package Code
DIMM
DIMM
Package Equivalence Code
DIMM200,24
DIMM200,24
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
MICROELECTRONIC ASSEMBLY
MICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Cel)
260
Qualification Status
Not Qualified
Not Qualified
Refresh Cycles
8192
8192
Self Refresh
YES
YES
Supply Current-Max
1.6 mA
1.44 mA
Supply Voltage-Max (Vsup)
2.7 V
2.7 V
Supply Voltage-Min (Vsup)
2.3 V
2.3 V
Supply Voltage-Nom (Vsup)
2.5 V
2.5 V
Surface Mount
NO
NO
Technology
CMOS
CMOS
Temperature Grade
COMMERCIAL
COMMERCIAL
Terminal Form
NO LEAD
NO LEAD
Terminal Pitch
0.6 mm
0.6 mm
Terminal Position
DUAL
ZIG-ZAG
Time@Peak Reflow Temperature-Max (s)
20
Base Number Matches
1
1
Pbfree Code
JESD-609 Code
e0
Terminal Finish
TIN LEAD
Compare HYMD232M646DP8-K with alternatives
Compare M470L3324BT0-LB0 with alternatives