HYMD216646DL6-M vs V826616J24SAIY-B0 feature comparison

HYMD216646DL6-M SK Hynix Inc

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V826616J24SAIY-B0 ProMOS Technologies Inc

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Pbfree Code No Yes
Rohs Code No Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SK HYNIX INC PROMOS TECHNOLOGIES INC
Package Description DIMM, DIMM184 DIMM, DIMM184
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.32 8542.32.00.32
Access Time-Max 0.75 ns 0.75 ns
Clock Frequency-Max (fCLK) 133 MHz 133 MHz
I/O Type COMMON COMMON
JESD-30 Code R-PDMA-N184 R-PDMA-N184
Memory Density 1073741824 bit 1073741824 bit
Memory IC Type DDR DRAM MODULE DDR DRAM MODULE
Memory Width 64 64
Moisture Sensitivity Level 1
Number of Terminals 184 184
Number of Words 16777216 words 16777216 words
Number of Words Code 16000000 16000000
Operating Temperature-Max 70 °C 70 °C
Operating Temperature-Min
Organization 16MX64 16MX64
Output Characteristics 3-STATE 3-STATE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code DIMM DIMM
Package Equivalence Code DIMM184 DIMM184
Package Shape RECTANGULAR RECTANGULAR
Package Style MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY
Qualification Status Not Qualified Not Qualified
Refresh Cycles 8192 8192
Supply Current-Max 0.88 mA 1.21 mA
Supply Voltage-Nom (Vsup) 2.5 V 2.5 V
Surface Mount NO NO
Technology CMOS CMOS
Temperature Grade COMMERCIAL COMMERCIAL
Terminal Form NO LEAD NO LEAD
Terminal Pitch 1.27 mm 1.27 mm
Terminal Position DUAL DUAL
Base Number Matches 1 1
JESD-609 Code e4
Terminal Finish GOLD

Compare HYMD216646DL6-M with alternatives

Compare V826616J24SAIY-B0 with alternatives