HYMD216646C6-M vs M368L1624DTL-CB0 feature comparison

HYMD216646C6-M SK Hynix Inc

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M368L1624DTL-CB0 Samsung Semiconductor

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Rohs Code No No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SK HYNIX INC SAMSUNG SEMICONDUCTOR INC
Part Package Code DIMM DIMM
Package Description DIMM, DIMM184 DIMM, DIMM184
Pin Count 184 184
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.32 8542.32.00.32
Access Mode SINGLE BANK PAGE BURST FOUR BANK PAGE BURST
Access Time-Max 0.75 ns 0.75 ns
Additional Feature AUTO/SELF REFRESH AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 133 MHz 133 MHz
I/O Type COMMON COMMON
JESD-30 Code R-XDMA-N184 R-XDMA-N184
Memory Density 1073741824 bit 1073741824 bit
Memory IC Type DDR DRAM MODULE DDR DRAM MODULE
Memory Width 64 64
Number of Functions 1 1
Number of Ports 1 1
Number of Terminals 184 184
Number of Words 16777216 words 16777216 words
Number of Words Code 16000000 16000000
Operating Mode SYNCHRONOUS SYNCHRONOUS
Operating Temperature-Max 70 °C 70 °C
Operating Temperature-Min
Organization 16MX64 16MX64
Output Characteristics 3-STATE 3-STATE
Package Body Material UNSPECIFIED UNSPECIFIED
Package Code DIMM DIMM
Package Equivalence Code DIMM184 DIMM184
Package Shape RECTANGULAR RECTANGULAR
Package Style MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Cel) NOT SPECIFIED
Qualification Status Not Qualified Not Qualified
Refresh Cycles 8192 8192
Self Refresh YES YES
Supply Current-Max 1.34 mA
Supply Voltage-Max (Vsup) 2.7 V 2.7 V
Supply Voltage-Min (Vsup) 2.3 V 2.3 V
Supply Voltage-Nom (Vsup) 2.5 V 2.5 V
Surface Mount NO NO
Technology CMOS CMOS
Temperature Grade COMMERCIAL COMMERCIAL
Terminal Form NO LEAD NO LEAD
Terminal Pitch 1.27 mm 1.27 mm
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Number Matches 1 1
Moisture Sensitivity Level 1

Compare HYMD216646C6-M with alternatives

Compare M368L1624DTL-CB0 with alternatives