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HYB39S512800AT-7.5 vs K4H510838B-NLB0 feature comparison

HYB39S512800AT-7.5 Qimonda AG

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K4H510838B-NLB0 Samsung Semiconductor

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Rohs Code Yes No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer QIMONDA AG SAMSUNG SEMICONDUCTOR INC
Part Package Code TSOP2 TSOP2
Package Description TSOP2, TSOP54,.46,32 TSSOP, TSSOP54,.46,16
Pin Count 54 54
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.28 8542.32.00.28
Access Mode FOUR BANK PAGE BURST FOUR BANK PAGE BURST
Access Time-Max 5.4 ns 0.75 ns
Additional Feature AUTO/SELF REFRESH AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 133 MHz 133 MHz
I/O Type COMMON COMMON
Interleaved Burst Length 1,2,4,8 2,4,8
JESD-30 Code R-PDSO-G54 R-PDSO-G54
Length 22.22 mm
Memory Density 536870912 bit 536870912 bit
Memory IC Type SYNCHRONOUS DRAM DDR1 DRAM
Memory Width 8 8
Moisture Sensitivity Level 1
Number of Functions 1 1
Number of Ports 1 1
Number of Terminals 54 54
Number of Words 67108864 words 67108864 words
Number of Words Code 64000000 64000000
Operating Mode SYNCHRONOUS SYNCHRONOUS
Operating Temperature-Max 70 °C 70 °C
Operating Temperature-Min
Organization 64MX8 64MX8
Output Characteristics 3-STATE 3-STATE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code TSOP2 TSSOP
Package Equivalence Code TSOP54,.46,32 TSSOP54,.46,16
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
Qualification Status Not Qualified Not Qualified
Refresh Cycles 8192 8192
Seated Height-Max 1.2 mm 1.2 mm
Self Refresh YES YES
Sequential Burst Length 1,2,4,8,FP 2,4,8
Standby Current-Max 0.003 A 0.005 A
Supply Current-Max 0.3 mA 0.34 mA
Supply Voltage-Max (Vsup) 3.6 V 2.7 V
Supply Voltage-Min (Vsup) 3 V 2.3 V
Supply Voltage-Nom (Vsup) 3.3 V 2.5 V
Surface Mount YES YES
Technology CMOS CMOS
Temperature Grade COMMERCIAL COMMERCIAL
Terminal Form GULL WING GULL WING
Terminal Pitch 0.8 mm 0.4 mm
Terminal Position DUAL DUAL
Width 10.16 mm 10.16 mm
Base Number Matches 2 1
JESD-609 Code e0
Terminal Finish TIN LEAD
Memory » DRAMs
Memory » DRAMs

Compare HYB39S512800AT-7.5 with alternatives

Compare K4H510838B-NLB0 with alternatives