HYB18T512800AF-3 vs N2TU51280BE-3C feature comparison

HYB18T512800AF-3 Qimonda AG

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N2TU51280BE-3C Nanya Technology Corporation

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Yes
Obsolete Obsolete
QIMONDA AG NANYA TECHNOLOGY CORP
BGA BGA
TFBGA, BGA60,9X11,32 TFBGA,
60 60
unknown compliant
EAR99 EAR99
8542.32.00.28 8542.32.00.28
FOUR BANK PAGE BURST FOUR BANK PAGE BURST
0.45 ns 0.45 ns
AUTO/SELF REFRESH AUTO/SELF REFRESH
333 MHz
COMMON
4,8
R-PBGA-B60 R-PBGA-B60
10.5 mm 10.5 mm
536870912 bit 536870912 bit
DDR2 DRAM DDR DRAM
8 8
3
1 1
1 1
60 60
67108864 words 67108864 words
64000000 64000000
SYNCHRONOUS SYNCHRONOUS
95 °C 85 °C
64MX8 64MX8
3-STATE
PLASTIC/EPOXY PLASTIC/EPOXY
TFBGA TFBGA
BGA60,9X11,32
RECTANGULAR RECTANGULAR
GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH
Not Qualified Not Qualified
8192
1.2 mm 1.2 mm
YES YES
4,8
0.0055 A
0.155 mA
1.9 V 1.9 V
1.7 V 1.7 V
1.8 V 1.8 V
YES YES
CMOS CMOS
OTHER OTHER
BALL BALL
0.8 mm 0.8 mm
BOTTOM BOTTOM
10 mm 10 mm
2 1

Compare HYB18T512800AF-3 with alternatives

Compare N2TU51280BE-3C with alternatives