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HYB18T256160BF-3 vs IS43DR16160B-3DBLI feature comparison

HYB18T256160BF-3 Qimonda AG

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IS43DR16160B-3DBLI Integrated Silicon Solution Inc

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer QIMONDA AG INTEGRATED SILICON SOLUTION INC
Part Package Code BGA
Package Description TFBGA, BGA84,9X15,32 TFBGA, BGA84,9X15,32
Pin Count 84
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.24 8542.32.00.24
Access Mode FOUR BANK PAGE BURST FOUR BANK PAGE BURST
Access Time-Max 0.45 ns 0.45 ns
Additional Feature AUTO/SELF REFRESH AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 333 MHz 333 MHz
I/O Type COMMON COMMON
Interleaved Burst Length 4,8 4,8
JESD-30 Code R-PBGA-B84 R-PBGA-B84
Length 12.5 mm 12.5 mm
Memory Density 268435456 bit 268435456 bit
Memory IC Type DDR2 DRAM DDR2 DRAM
Memory Width 16 16
Moisture Sensitivity Level 3 3
Number of Functions 1 1
Number of Ports 1 1
Number of Terminals 84 84
Number of Words 16777216 words 16777216 words
Number of Words Code 16000000 16000000
Operating Mode SYNCHRONOUS SYNCHRONOUS
Operating Temperature-Max 70 °C 85 °C
Operating Temperature-Min -40 °C
Organization 16MX16 16MX16
Output Characteristics 3-STATE 3-STATE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code TFBGA TFBGA
Package Equivalence Code BGA84,9X15,32 BGA84,9X15,32
Package Shape RECTANGULAR RECTANGULAR
Package Style GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH
Qualification Status Not Qualified Not Qualified
Refresh Cycles 8192 8192
Seated Height-Max 1.2 mm 1.2 mm
Self Refresh YES YES
Sequential Burst Length 4,8 4,8
Standby Current-Max 0.006 A 0.025 A
Supply Current-Max 0.14 mA 0.28 mA
Supply Voltage-Max (Vsup) 1.9 V 1.9 V
Supply Voltage-Min (Vsup) 1.7 V 1.7 V
Supply Voltage-Nom (Vsup) 1.8 V 1.8 V
Surface Mount YES YES
Technology CMOS CMOS
Temperature Grade COMMERCIAL INDUSTRIAL
Terminal Form BALL BALL
Terminal Pitch 0.8 mm 0.8 mm
Terminal Position BOTTOM BOTTOM
Width 10 mm 8 mm
Base Number Matches 1 1
Factory Lead Time 10 Weeks
Samacsys Manufacturer Integrated Silicon Solution Inc.
JESD-609 Code e1
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Memory » DRAMs
Memory » DRAMs

Compare HYB18T256160BF-3 with alternatives

Compare IS43DR16160B-3DBLI with alternatives