HY62UF16803ASLM-85I vs K6F8016S6A-EF70 feature comparison

HY62UF16803ASLM-85I SK Hynix Inc

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K6F8016S6A-EF70 Samsung Semiconductor

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Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SK HYNIX INC SAMSUNG SEMICONDUCTOR INC
Part Package Code BGA BGA
Package Description VFBGA, VFBGA, BGA48,6X8,30
Pin Count 48 48
Reach Compliance Code unknown unknown
ECCN Code 3A991.B.2.A 3A991.B.2.A
HTS Code 8542.32.00.41 8542.32.00.41
Access Time-Max 85 ns 70 ns
JESD-30 Code R-PBGA-B48 R-PBGA-B48
JESD-609 Code e1 e0
Length 8.5 mm 9 mm
Memory Density 8388608 bit 8388608 bit
Memory IC Type STANDARD SRAM STANDARD SRAM
Memory Width 16 16
Number of Functions 1 1
Number of Terminals 48 48
Number of Words 524288 words 524288 words
Number of Words Code 512000 512000
Operating Mode ASYNCHRONOUS ASYNCHRONOUS
Operating Temperature-Max 85 °C 85 °C
Operating Temperature-Min -40 °C -40 °C
Organization 512KX16 512KX16
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code VFBGA VFBGA
Package Shape RECTANGULAR RECTANGULAR
Package Style GRID ARRAY, VERY THIN PROFILE, FINE PITCH GRID ARRAY, VERY THIN PROFILE, FINE PITCH
Parallel/Serial PARALLEL PARALLEL
Qualification Status Not Qualified Not Qualified
Seated Height-Max 0.95 mm 1 mm
Supply Voltage-Max (Vsup) 3.3 V 2.7 V
Supply Voltage-Min (Vsup) 2.7 V 2.3 V
Supply Voltage-Nom (Vsup) 3 V 2.5 V
Surface Mount YES YES
Technology CMOS CMOS
Temperature Grade INDUSTRIAL INDUSTRIAL
Terminal Finish TIN SILVER COPPER TIN LEAD
Terminal Form BALL BALL
Terminal Pitch 0.75 mm 0.75 mm
Terminal Position BOTTOM BOTTOM
Width 7.4 mm 7 mm
Base Number Matches 1 1
Rohs Code No
I/O Type COMMON
Output Characteristics 3-STATE
Package Equivalence Code BGA48,6X8,30
Standby Current-Max 0.000006 A
Standby Voltage-Min 1.5 V
Supply Current-Max 0.03 mA

Compare HY62UF16803ASLM-85I with alternatives

Compare K6F8016S6A-EF70 with alternatives