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HY5DW283222AF-33 vs K4D263238K-VC500 feature comparison

HY5DW283222AF-33 SK Hynix Inc

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K4D263238K-VC500 Samsung Semiconductor

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Rohs Code No Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SK HYNIX INC SAMSUNG SEMICONDUCTOR INC
Part Package Code BGA BGA
Package Description TFBGA, BGA144,12X12,32 LFBGA, BGA144,12X12,32
Pin Count 144 144
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.02 8542.32.00.02
Access Mode FOUR BANK PAGE BURST FOUR BANK PAGE BURST
Access Time-Max 0.6 ns 0.7 ns
Additional Feature AUTO/SELF REFRESH AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 300 MHz 200 MHz
I/O Type COMMON COMMON
Interleaved Burst Length 2,4,8 2,4,8
JESD-30 Code S-PBGA-B144 S-PBGA-B144
Length 12 mm 12 mm
Memory Density 134217728 bit 134217728 bit
Memory IC Type DDR1 DRAM GDDR1 DRAM
Memory Width 32 32
Number of Functions 1 1
Number of Ports 1 1
Number of Terminals 144 144
Number of Words 4194304 words 4194304 words
Number of Words Code 4000000 4000000
Operating Mode SYNCHRONOUS SYNCHRONOUS
Operating Temperature-Max 70 °C 65 °C
Operating Temperature-Min
Organization 4MX32 4MX32
Output Characteristics 3-STATE 3-STATE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code TFBGA LFBGA
Package Equivalence Code BGA144,12X12,32 BGA144,12X12,32
Package Shape SQUARE SQUARE
Package Style GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, LOW PROFILE, FINE PITCH
Peak Reflow Temperature (Cel) NOT SPECIFIED 260
Qualification Status Not Qualified Not Qualified
Refresh Cycles 4096 4096
Seated Height-Max 1.2 mm 1.4 mm
Self Refresh YES YES
Sequential Burst Length 2,4,8 2,4,8,FP
Standby Current-Max 0.025 A 0.02 A
Supply Current-Max 0.7 mA 0.344 mA
Supply Voltage-Max (Vsup) 2.625 V 2.625 V
Supply Voltage-Min (Vsup) 2.375 V 2.375 V
Supply Voltage-Nom (Vsup) 2.5 V 2.5 V
Surface Mount YES YES
Technology CMOS CMOS
Temperature Grade COMMERCIAL COMMERCIAL
Terminal Form BALL BALL
Terminal Pitch 0.8 mm 0.8 mm
Terminal Position BOTTOM BOTTOM
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Width 12 mm 12 mm
Base Number Matches 1 1
JESD-609 Code e1
Moisture Sensitivity Level 3
Terminal Finish TIN SILVER COPPER
Memory » DRAMs
Memory » DRAMs

Compare HY5DW283222AF-33 with alternatives

Compare K4D263238K-VC500 with alternatives