HY5DU56822EF-JI
vs
K4H560838E-ZCB30
feature comparison
Pbfree Code |
Yes
|
Yes
|
Rohs Code |
Yes
|
Yes
|
Part Life Cycle Code |
Obsolete
|
Obsolete
|
Ihs Manufacturer |
SK HYNIX INC
|
SAMSUNG SEMICONDUCTOR INC
|
Part Package Code |
BGA
|
BGA
|
Package Description |
TBGA, BGA60,9X12,40/32
|
TBGA, BGA60,9X12,40/32
|
Pin Count |
60
|
60
|
Reach Compliance Code |
compliant
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8542.32.00.24
|
8542.32.00.24
|
Access Mode |
FOUR BANK PAGE BURST
|
FOUR BANK PAGE BURST
|
Access Time-Max |
0.7 ns
|
0.7 ns
|
Additional Feature |
AUTO/SELF REFRESH
|
AUTO/SELF REFRESH
|
Clock Frequency-Max (fCLK) |
166 MHz
|
166 MHz
|
I/O Type |
COMMON
|
COMMON
|
Interleaved Burst Length |
2,4,8
|
2,4,8
|
JESD-30 Code |
R-PBGA-B60
|
R-PBGA-B60
|
JESD-609 Code |
e1
|
e1
|
Length |
13 mm
|
14 mm
|
Memory Density |
268435456 bit
|
268435456 bit
|
Memory IC Type |
DDR1 DRAM
|
DDR1 DRAM
|
Memory Width |
8
|
8
|
Number of Functions |
1
|
1
|
Number of Ports |
1
|
1
|
Number of Terminals |
60
|
60
|
Number of Words |
33554432 words
|
33554432 words
|
Number of Words Code |
32000000
|
32000000
|
Operating Mode |
SYNCHRONOUS
|
SYNCHRONOUS
|
Operating Temperature-Max |
85 °C
|
70 °C
|
Operating Temperature-Min |
-40 °C
|
|
Organization |
32MX8
|
32MX8
|
Output Characteristics |
3-STATE
|
3-STATE
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Code |
TBGA
|
TBGA
|
Package Equivalence Code |
BGA60,9X12,40/32
|
BGA60,9X12,40/32
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
GRID ARRAY, THIN PROFILE
|
GRID ARRAY, THIN PROFILE
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Refresh Cycles |
8192
|
8192
|
Seated Height-Max |
1.17 mm
|
1.2 mm
|
Self Refresh |
YES
|
YES
|
Sequential Burst Length |
2,4,8
|
2,4,8
|
Standby Current-Max |
0.01 A
|
0.003 A
|
Supply Current-Max |
0.21 mA
|
0.28 mA
|
Supply Voltage-Max (Vsup) |
2.7 V
|
2.7 V
|
Supply Voltage-Min (Vsup) |
2.3 V
|
2.3 V
|
Supply Voltage-Nom (Vsup) |
2.5 V
|
2.5 V
|
Surface Mount |
YES
|
YES
|
Technology |
CMOS
|
CMOS
|
Temperature Grade |
INDUSTRIAL
|
COMMERCIAL
|
Terminal Finish |
TIN SILVER COPPER
|
TIN SILVER COPPER
|
Terminal Form |
BALL
|
BALL
|
Terminal Pitch |
1 mm
|
1 mm
|
Terminal Position |
BOTTOM
|
BOTTOM
|
Width |
8 mm
|
8 mm
|
Base Number Matches |
1
|
1
|
Moisture Sensitivity Level |
|
3
|
Peak Reflow Temperature (Cel) |
|
260
|
|
|
|
Compare HY5DU56822EF-JI with alternatives
Compare K4H560838E-ZCB30 with alternatives