HY51V65163HGLT-45
vs
K4E661612B-TC45
feature comparison
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
SK HYNIX INC
|
SAMSUNG SEMICONDUCTOR INC
|
| Part Package Code |
TSOP2
|
TSOP2
|
| Package Description |
TSOP2,
|
TSOP2,
|
| Pin Count |
50
|
50
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8542.32.00.02
|
8542.32.00.02
|
| Access Mode |
FAST PAGE WITH EDO
|
FAST PAGE WITH EDO
|
| Access Time-Max |
45 ns
|
45 ns
|
| Additional Feature |
RAS ONLY/CAS BEFORE RAS/HIDDEN/BATTERY BACKUP REFRESH
|
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
|
| JESD-30 Code |
R-PDSO-G50
|
R-PDSO-G50
|
| JESD-609 Code |
e6
|
|
| Length |
20.95 mm
|
20.95 mm
|
| Memory Density |
67108864 bit
|
67108864 bit
|
| Memory IC Type |
EDO DRAM
|
EDO DRAM
|
| Memory Width |
16
|
16
|
| Number of Functions |
1
|
1
|
| Number of Ports |
1
|
1
|
| Number of Terminals |
50
|
50
|
| Number of Words |
4194304 words
|
4194304 words
|
| Number of Words Code |
4000000
|
4000000
|
| Operating Mode |
ASYNCHRONOUS
|
ASYNCHRONOUS
|
| Operating Temperature-Max |
70 °C
|
70 °C
|
| Operating Temperature-Min |
|
|
| Organization |
4MX16
|
4MX16
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Code |
TSOP2
|
TSOP2
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE, THIN PROFILE
|
SMALL OUTLINE, THIN PROFILE
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Seated Height-Max |
1.2 mm
|
1.2 mm
|
| Supply Voltage-Max (Vsup) |
3.6 V
|
3.6 V
|
| Supply Voltage-Min (Vsup) |
3 V
|
3 V
|
| Supply Voltage-Nom (Vsup) |
3.3 V
|
3.3 V
|
| Surface Mount |
YES
|
YES
|
| Technology |
CMOS
|
CMOS
|
| Temperature Grade |
COMMERCIAL
|
COMMERCIAL
|
| Terminal Finish |
TIN BISMUTH
|
|
| Terminal Form |
GULL WING
|
GULL WING
|
| Terminal Pitch |
0.8 mm
|
0.8 mm
|
| Terminal Position |
DUAL
|
DUAL
|
| Width |
10.16 mm
|
10.16 mm
|
| Base Number Matches |
1
|
1
|
|
|
|
Compare HY51V65163HGLT-45 with alternatives
Compare K4E661612B-TC45 with alternatives