HVU350BTRF-E vs BBY51-03WE6433 feature comparison

HVU350BTRF-E Renesas Electronics Corporation

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BBY51-03WE6433 Infineon Technologies AG

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Pbfree Code Yes
Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer RENESAS ELECTRONICS CORP INFINEON TECHNOLOGIES AG
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80 8541.10.00.80
Factory Lead Time 4 Weeks
Breakdown Voltage-Min 15 V 7 V
Configuration SINGLE SINGLE
Diode Capacitance Ratio-Min 2.8 1.55
Diode Element Material SILICON SILICON
Diode Type VARIABLE CAPACITANCE DIODE VARIABLE CAPACITANCE DIODE
JESD-30 Code R-PDSO-G2 R-PDSO-G2
JESD-609 Code e6
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 2 2
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish TIN BISMUTH
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Base Number Matches 1 2
Part Package Code SOD
Package Description R-PDSO-G2
Pin Count 2
Manufacturer Package Code SOD-323
Diode Cap Tolerance 6.48%
Diode Capacitance-Nom 5.4 pF
Peak Reflow Temperature (Cel) NOT SPECIFIED
Rep Pk Reverse Voltage-Max 7 V
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Variable Capacitance Diode Classification HYPERABRUPT

Compare HVU350BTRF-E with alternatives

Compare BBY51-03WE6433 with alternatives