HUFA76409P3
vs
MTD1N50E
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Transferred
Ihs Manufacturer
FAIRCHILD SEMICONDUCTOR CORP
MOTOROLA INC
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE
DS Breakdown Voltage-Min
60 V
500 V
Drain Current-Max (ID)
18 A
1 A
Drain-source On Resistance-Max
0.074 Ω
5 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-220AB
JESD-30 Code
R-PSFM-T3
R-PSSO-G2
JESD-609 Code
e3
e0
Number of Elements
1
1
Number of Terminals
3
2
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
175 °C
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
FLANGE MOUNT
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
49 W
40 W
Qualification Status
Not Qualified
Not Qualified
Surface Mount
NO
YES
Terminal Finish
MATTE TIN
Tin/Lead (Sn/Pb)
Terminal Form
THROUGH-HOLE
GULL WING
Terminal Position
SINGLE
SINGLE
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
2
4
Package Description
SMALL OUTLINE, R-PSSO-G2
Additional Feature
AVALANCHE RATED
Avalanche Energy Rating (Eas)
45 mJ
Pulsed Drain Current-Max (IDM)
3 A
Compare HUFA76409P3 with alternatives
Compare MTD1N50E with alternatives