HUFA76409D3ST
vs
IRFR024NTRPBF
feature comparison
All Stats
Differences Only
Pbfree Code
Part Life Cycle Code
Obsolete
Active
Ihs Manufacturer
ONSEMI
INFINEON TECHNOLOGIES AG
Part Package Code
DPAK-3 / TO-252-3
Manufacturer Package Code
369AS
Reach Compliance Code
not_compliant
not_compliant
ECCN Code
EAR99
EAR99
Samacsys Manufacturer
onsemi
Infineon
Additional Feature
ULTRA LOW RESISTANCE
AVALANCHE RATED, ULTRA-LOW RESISTANCE
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
60 V
55 V
Drain Current-Max (ID)
18 A
17 A
Drain-source On Resistance-Max
0.075 Ω
0.075 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-252AA
TO-252AA
JESD-30 Code
R-PSSO-G2
R-PSSO-G2
JESD-609 Code
e3
e3
Moisture Sensitivity Level
1
1
Number of Elements
1
1
Number of Terminals
2
2
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
175 °C
175 °C
Operating Temperature-Min
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
260
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
49 W
45 W
Qualification Status
Not Qualified
Not Qualified
Reference Standard
AEC-Q101
Surface Mount
YES
YES
Terminal Finish
MATTE TIN
Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Form
GULL WING
GULL WING
Terminal Position
SINGLE
SINGLE
Time@Peak Reflow Temperature-Max (s)
30
30
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Turn-off Time-Max (toff)
136 ns
Turn-on Time-Max (ton)
59 ns
Base Number Matches
1
1
Rohs Code
Factory Lead Time
17 Weeks, 5 Days
Avalanche Energy Rating (Eas)
71 mJ
Pulsed Drain Current-Max (IDM)
68 A
Compare HUFA76409D3ST with alternatives
Compare IRFR024NTRPBF with alternatives