HUFA76409D3
vs
HUF75309D3S
feature comparison
Part Life Cycle Code |
Active
|
Active
|
Ihs Manufacturer |
ON SEMICONDUCTOR
|
ROCHESTER ELECTRONICS LLC
|
Reach Compliance Code |
compliant
|
unknown
|
ECCN Code |
EAR99
|
|
Additional Feature |
ULTRA LOW RESISTANCE
|
|
Case Connection |
DRAIN
|
DRAIN
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
60 V
|
55 V
|
Drain Current-Max (ID) |
17 A
|
19 A
|
Drain-source On Resistance-Max |
0.063 Ω
|
0.07 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code |
TO-251AA
|
TO-252AA
|
JESD-30 Code |
R-PSIP-T3
|
R-PSSO-G2
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
2
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
175 °C
|
|
Operating Temperature-Min |
-55 °C
|
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
IN-LINE
|
SMALL OUTLINE
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation-Max (Abs) |
49 W
|
|
Reference Standard |
AEC-Q101
|
|
Surface Mount |
NO
|
YES
|
Terminal Form |
THROUGH-HOLE
|
GULL WING
|
Terminal Position |
SINGLE
|
SINGLE
|
Transistor Element Material |
SILICON
|
SILICON
|
Turn-off Time-Max (toff) |
136 ns
|
|
Turn-on Time-Max (ton) |
59 ns
|
|
Base Number Matches |
3
|
4
|
Pbfree Code |
|
Yes
|
Moisture Sensitivity Level |
|
NOT SPECIFIED
|
Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
Qualification Status |
|
COMMERCIAL
|
Terminal Finish |
|
NOT SPECIFIED
|
Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
Transistor Application |
|
SWITCHING
|
|
|
|
Compare HUFA76409D3 with alternatives
Compare HUF75309D3S with alternatives