HUFA76409D3 vs HUF75309D3S feature comparison

HUFA76409D3 onsemi

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HUF75309D3S Rochester Electronics LLC

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Part Life Cycle Code Active Active
Ihs Manufacturer ON SEMICONDUCTOR ROCHESTER ELECTRONICS LLC
Reach Compliance Code compliant unknown
ECCN Code EAR99
Additional Feature ULTRA LOW RESISTANCE
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V 55 V
Drain Current-Max (ID) 17 A 19 A
Drain-source On Resistance-Max 0.063 Ω 0.07 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-251AA TO-252AA
JESD-30 Code R-PSIP-T3 R-PSSO-G2
Number of Elements 1 1
Number of Terminals 3 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style IN-LINE SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 49 W
Reference Standard AEC-Q101
Surface Mount NO YES
Terminal Form THROUGH-HOLE GULL WING
Terminal Position SINGLE SINGLE
Transistor Element Material SILICON SILICON
Turn-off Time-Max (toff) 136 ns
Turn-on Time-Max (ton) 59 ns
Base Number Matches 3 4
Pbfree Code Yes
Moisture Sensitivity Level NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Qualification Status COMMERCIAL
Terminal Finish NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING

Compare HUFA76409D3 with alternatives

Compare HUF75309D3S with alternatives