HUFA75321D3
vs
HUFA76429D3
feature comparison
All Stats
Differences Only
Pbfree Code
Part Life Cycle Code
Active
Transferred
Ihs Manufacturer
ROCHESTER ELECTRONICS LLC
INTERSIL CORP
Reach Compliance Code
unknown
unknown
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
55 V
60 V
Drain Current-Max (ID)
20 A
20 A
Drain-source On Resistance-Max
0.036 Ω
0.029 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-251AA
TO-251AA
JESD-30 Code
R-PSIP-T3
R-PSIP-T3
JESD-609 Code
e3
Moisture Sensitivity Level
NOT APPLICABLE
Number of Elements
1
1
Number of Terminals
3
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
IN-LINE
IN-LINE
Peak Reflow Temperature (Cel)
NOT APPLICABLE
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Qualification Status
COMMERCIAL
Not Qualified
Surface Mount
NO
NO
Terminal Finish
MATTE TIN
Terminal Form
THROUGH-HOLE
THROUGH-HOLE
Terminal Position
SINGLE
SINGLE
Time@Peak Reflow Temperature-Max (s)
NOT APPLICABLE
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
2
3
ECCN Code
EAR99
Compare HUFA75321D3 with alternatives
Compare HUFA76429D3 with alternatives