HUF76429S3S
vs
MTB50N06ELT4
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
FAIRCHILD SEMICONDUCTOR CORP
MOTOROLA INC
Reach Compliance Code
not_compliant
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.29.00.95
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE
DS Breakdown Voltage-Min
60 V
60 V
Drain Current-Max (ID)
47 A
50 A
Drain-source On Resistance-Max
0.025 Ω
0.028 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-263AB
JESD-30 Code
R-PSSO-G2
R-PSSO-G2
JESD-609 Code
e3
Moisture Sensitivity Level
1
Number of Elements
1
1
Number of Terminals
2
2
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
175 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
110 W
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Finish
MATTE TIN
Terminal Form
GULL WING
GULL WING
Terminal Position
SINGLE
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
2
2
Package Description
SMALL OUTLINE, R-PSSO-G2
Pin Count
3
Manufacturer Package Code
CASE 418B-02
Additional Feature
LOGIC LEVEL COMPATIBLE
Compare HUF76429S3S with alternatives
Compare MTB50N06ELT4 with alternatives