HUF76113T3ST
vs
HUF76113T3ST
feature comparison
Rohs Code |
No
|
No
|
Part Life Cycle Code |
Obsolete
|
Active
|
Ihs Manufacturer |
FAIRCHILD SEMICONDUCTOR CORP
|
ROCHESTER ELECTRONICS LLC
|
Part Package Code |
SOT-223
|
SOT-223
|
Package Description |
SOT-223, 4 PIN
|
SOT-223, 4 PIN
|
Pin Count |
4
|
4
|
Reach Compliance Code |
unknown
|
unknown
|
ECCN Code |
EAR99
|
|
Additional Feature |
ULTRA-LOW RESISTANCE
|
ULTRA-LOW RESISTANCE
|
Case Connection |
DRAIN
|
DRAIN
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
30 V
|
30 V
|
Drain Current-Max (ID) |
4.7 A
|
4.7 A
|
Drain-source On Resistance-Max |
0.038 Ω
|
0.038 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-30 Code |
R-PDSO-G4
|
R-PDSO-G4
|
JESD-609 Code |
e0
|
e0
|
Number of Elements |
1
|
1
|
Number of Terminals |
4
|
4
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
150 °C
|
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation-Max (Abs) |
1.1 W
|
|
Qualification Status |
Not Qualified
|
COMMERCIAL
|
Surface Mount |
YES
|
YES
|
Terminal Finish |
TIN LEAD
|
TIN LEAD
|
Terminal Form |
GULL WING
|
GULL WING
|
Terminal Position |
DUAL
|
DUAL
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
1
|
1
|
Pbfree Code |
|
No
|
Moisture Sensitivity Level |
|
NOT SPECIFIED
|
Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
|
|
|