HUF76113DK8 vs TPCA8020-H feature comparison

HUF76113DK8 Fairchild Semiconductor Corporation

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TPCA8020-H Toshiba America Electronic Components

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Pbfree Code No
Rohs Code No
Part Life Cycle Code Obsolete End Of Life
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP TOSHIBA CORP
Part Package Code SOIC
Package Description PLASTIC, SO-8 SMALL OUTLINE, R-PDSO-F8
Pin Count 8 8
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V 40 V
Drain Current-Max (ID) 6 A 7.5 A
Drain-source On Resistance-Max 0.041 Ω 0.035 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code MS-012AA
JESD-30 Code R-PDSO-G8 R-PDSO-F8
JESD-609 Code e0 e0
Number of Elements 2 1
Number of Terminals 8 8
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 2.5 W 2.8 W
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish TIN LEAD TIN LEAD
Terminal Form GULL WING FLAT
Terminal Position DUAL DUAL
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 2 2
Avalanche Energy Rating (Eas) 26 mJ
Pulsed Drain Current-Max (IDM) 30 A

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