HUF76013D3S vs HUF76009D3ST feature comparison

HUF76013D3S Intersil Corporation

Buy Now Datasheet

HUF76009D3ST Intersil Corporation

Buy Now Datasheet
Rohs Code No No
Part Life Cycle Code Transferred Transferred
Ihs Manufacturer INTERSIL CORP INTERSIL CORP
Reach Compliance Code not_compliant not_compliant
ECCN Code EAR99 EAR99
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V 20 V
Drain Current-Max (ID) 20 A 20 A
Drain-source On Resistance-Max 0.03 Ω 0.039 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252AA TO-252AA
JESD-30 Code R-PSSO-G2 R-PSSO-G2
JESD-609 Code e0 e0
Number of Elements 1 1
Number of Terminals 2 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 50 W 41 W
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 2 1

Compare HUF76013D3S with alternatives

Compare HUF76009D3ST with alternatives