HUF75617D3ST
vs
FQB6N40C
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Transferred
Transferred
Ihs Manufacturer
INTERSIL CORP
FAIRCHILD SEMICONDUCTOR CORP
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
EAR99
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
100 V
400 V
Drain Current-Max (ID)
16 A
6 A
Drain-source On Resistance-Max
0.09 Ω
1 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-252AA
JESD-30 Code
R-PSSO-G2
R-PSSO-G2
Number of Elements
1
1
Number of Terminals
2
2
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Form
GULL WING
GULL WING
Terminal Position
SINGLE
SINGLE
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
3
2
Rohs Code
Package Description
SMALL OUTLINE, R-PSSO-G2
Pin Count
3
HTS Code
8541.29.00.95
Additional Feature
FAST SWITCHING
Avalanche Energy Rating (Eas)
270 mJ
Moisture Sensitivity Level
1
Operating Temperature-Max
150 °C
Pulsed Drain Current-Max (IDM)
24 A
Compare HUF75617D3ST with alternatives
Compare FQB6N40C with alternatives