HUF75329D3ST
vs
2SJ174
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Transferred
Ihs Manufacturer
HARRIS SEMICONDUCTOR
HITACHI LTD
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
Drain-source On Resistance-Max
0.026 Ω
0.13 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-252AA
TO-220AB
JESD-30 Code
R-PSSO-G2
R-PSFM-T3
Number of Terminals
2
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
P-CHANNEL
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
NO
Terminal Form
GULL WING
THROUGH-HOLE
Terminal Position
SINGLE
SINGLE
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
5
2
Rohs Code
Part Package Code
TO-220AB
Package Description
FLANGE MOUNT, R-PSFM-T3
Pin Count
3
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
60 V
Drain Current-Max (ID)
20 A
Number of Elements
1
Operating Temperature-Max
150 °C
Power Dissipation-Max (Abs)
75 W
Pulsed Drain Current-Max (IDM)
80 A
Compare HUF75329D3ST with alternatives
Compare 2SJ174 with alternatives